Advanced Nano- and Piezoelectric Materials and Their by Ivan A. Parinov PDF

By Ivan A. Parinov

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In the oxidation process, three stages of dielectric growth should be observed: (i) extremely thin oxide layer at the moment when the dissociation of molecular oxygen proceeds on the surface of growing silicon dioxide (x = x0); (ii) the average thickness oxide (x > x0); (iii) extremely thick oxide layer, if x >> x0; in this case value of x0 could be neglected, assuming that the dissociation of the oxidant occurs at the Si  SiO2 interface. For the first case the model can be simplified by assuming that at the initial stage of oxidation the restricting factor is the chemical reaction rate at interface, then dx F4 nk1C0  (1  n)k 2 C0 ,   dt N1 N1 (12) x  nK L' t  (1  n) K L'' t , (13) so where K L' , K L'' are the linear growth rate for photo- and thermally stimulated reactions.

Polyakov by estimating the oxide film thickness. The extension of oxidation time and the temperature increase up to 800 C result to increasing in the proportion of SiO2. During long oxidation at 800 C neither carbon containing co-products, nor graphite-like carbon in oxide film are detected at the interface or on the surface [73]. For non-polar (10 1 0) and (11 2 0) surfaces after the initial oxidation stage the presence of under-oxidized silicon (Si2O, SiO) is observed at the interface SiO2/SiC, while for (000 1 ) polar surface only silicon sub-oxide Si2O3 or Si2O5 is observed [76].

The rate of the flow, comprising water vapor and oxygen). For samples (1-4) from Table 2, there is an increase in oxide thickness with increasing the gas flow rate. However, the gas flow rate of sample 5 is lower than the one of samples 1-4, while the oxide is thicker. Thus, it may be concluded that the oxide thickness does not depend on the gas flow rate [62]. Apart from kinetic principles of silicon dioxide formation on SiC, dielectric material electrophysical characteristics are of great interest.

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